High Performance and Function Design on the Transistor Level
نویسندگان
چکیده
This paper proposes a new design of pass transistor logic based 2T AND gate. Performance comparison of proposed gate with traditional CMOS, complementary pass-transistor logic design and GDI techniques is presented. Different methods have been compared with respect to the number of devices, power-delay product, temperature sustainability and noise immunity in order to prove the superiority of proposed design over existing ones. The simulation has been carried out on Tanner EDA tool on BSIM3v3 90nm technology.
منابع مشابه
A Computational Study on the Performance of Graphene Nanoribbon Field Effect Transistor
Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performan...
متن کاملAnalysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser
In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation and rate equations of HBTL. We compare the performance (current gain,output photon number and small signal modulation bandwi...
متن کاملPerformance Investigation of Pentacene Based Organic Double Gate Field Effect Transistor and its Application as an Ultrasensitive Biosensor
In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...
متن کاملNovel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor
In this paper, the electrical characteristics and sensitivity analysis of staggered type p-channel heterojunction electron-hole bilayer tunnel field effect transistor (HJ-EHBTFET) are thoroughly investigated via simulation study. The minimum lattice mismatch between InAs/GaAs0.1Sb0.9 layers besides low carrier effective mass of materials provides high probability ...
متن کاملEffects of the Spacer Length on the High-Frequency Nanoscale Field Effect Diode performance
The performance of nanoscale Field Effect Diodes as a function of the spacer length between two gates is investigated. Our numerical results show that the Ion/Ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for S-FED as the spacer length between two gates increases whereas this ratio is approximately constant for M-FED. The high-frequency perform...
متن کاملSwitching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...
متن کامل